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Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFK26N100P
IXFX26N100P
V DSS
I D25
R DS(on)
t rr
= 1000V
= 26A
≤ 390m Ω
≤ 300ns
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
1000
1000
V
V
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
G
D
S
(TAB)
I D25
I DM
I AR
E AS
dV/dt
P D
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
26
65
13
1
15
780
A
A
A
J
V/ns
W
PLUS247 (IXFX)
(TAB)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T L
T SOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
° C
° C
Features
Fast intrinsic diode
M d
F C
Weight
Mounting torque
Mounting force
TO-264
TO-247
(IXFK)
(IXFX)
1.13/10
20..120 /4.5..27
10
6
Nm/lb.in.
N/lb.
g
g
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
Easy to mount
Space savings
High power density
BV DSS
V GS = 0V, I D = 3mA
1000
V
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 125 ° C
3.5
6.5
± 200
25
2
V
nA
μ A
mA
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
390
m Ω
AC and DC motor controls
Robotics and servo controls
? 2008 IXYS CORPORATION,All rights reserved
DS99853A(4/08)
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IXFK26N60Q 功能描述:MOSFET 28 Amps 600V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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